Sensitivity of ft to Process Parameter Variation in 30 nm Gate Length Fin FETs

This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness and SD doping and less sensitive to source/drain width and length, and work function variations.