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Numerical simulation of tandem solar cells basedCIGS and C-Si sub-cells using SCAPS -1D


Affiliations
1 Department of Electronics, Faculty of Technology, University Mohamed Boudiaf, 28000, M’sila, Algeria
2 Department of Physics, Division of Science & Technology, University of Education, Lahore,, Pakistan
 

Numerical simulation of single junction and tandem solar cells-based copper indium gallium diselenide Cu(In,Ga)Se2 and silicon (c-Si) electrical characteristics have been accomplished by Solar Cell Capacitance Simulator (SCAPS 1-D) tool. The layered structure consisting of CIGS as top cell with a buffer layer of zinc-based oxysulfide Zn(O,S) and the bottom cell of c-Si junction has been investigated. The top and bottom single cells have demonstrated the conversion efficiency as 11.63 and 13.16%, respectively. The tandem designs exhibited a conversion efficiency of 25.68% resulted from the enhanced open-circuit voltage (VOC) as 0.90 V and short-circuit current density (JSC) as 36.99 mA/cm2 . The cells were illuminated via AM 1.5 to investigate the current densities and external quantum efficiency (EQE). The simulations were optimized by adjusting the CIGS concentration and the thickness of semiconducting layers. Moreover, the effect of variation in temperature on the device performance has been investigated.

Keywords

Tandem, SCAPS-1D, Buffer layer, Cu(In,Ga)Se2 material, c-Si.
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  • Numerical simulation of tandem solar cells basedCIGS and C-Si sub-cells using SCAPS -1D

Abstract Views: 320  |  PDF Views: 132

Authors

Amina Bouzidi
Department of Electronics, Faculty of Technology, University Mohamed Boudiaf, 28000, M’sila, Algeria
Idris Bouchama
Department of Electronics, Faculty of Technology, University Mohamed Boudiaf, 28000, M’sila, Algeria
Moufdi Hadjab
Department of Electronics, Faculty of Technology, University Mohamed Boudiaf, 28000, M’sila, Algeria
M. A. Saeed
Department of Physics, Division of Science & Technology, University of Education, Lahore,, Pakistan

Abstract


Numerical simulation of single junction and tandem solar cells-based copper indium gallium diselenide Cu(In,Ga)Se2 and silicon (c-Si) electrical characteristics have been accomplished by Solar Cell Capacitance Simulator (SCAPS 1-D) tool. The layered structure consisting of CIGS as top cell with a buffer layer of zinc-based oxysulfide Zn(O,S) and the bottom cell of c-Si junction has been investigated. The top and bottom single cells have demonstrated the conversion efficiency as 11.63 and 13.16%, respectively. The tandem designs exhibited a conversion efficiency of 25.68% resulted from the enhanced open-circuit voltage (VOC) as 0.90 V and short-circuit current density (JSC) as 36.99 mA/cm2 . The cells were illuminated via AM 1.5 to investigate the current densities and external quantum efficiency (EQE). The simulations were optimized by adjusting the CIGS concentration and the thickness of semiconducting layers. Moreover, the effect of variation in temperature on the device performance has been investigated.

Keywords


Tandem, SCAPS-1D, Buffer layer, Cu(In,Ga)Se2 material, c-Si.

References